News → Bidirectional Volatile Signatures of Metal–Oxide Memristors

Results of our comprehensive study for characterizing the relaxation dynamics of TiOx resistive RAM (RRAM) devices within a predefined volatility framework have been published (Part I: Characterization). In part II of this study, we have also presented a modeling framework that can account for RRAM relaxation characteristics (Part II: Modeling).

Published Thursday, 1 October 2020